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Applied Physics Letters

Volumn 95, Issue 15, 2009, Pages

Si nanocrystal p-i-n diodes fabricated on quartz substrates for third generation solar cell applications

(6) Perez Wurfl, Ivan a Hao, Xiaojing a Gentle, Angus a Kim, Dong Ho b Conibeer, Gavin a Green, Martin A a

a UNIVERSITY OF NEW SOUTH WALES (Australia)

b Korea Institute of Material Science (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALTERNATING LAYERS; ATOMIC RATIO; CURRENT CROWDING; ELECTRONIC BAND GAPS; HIGH RESISTIVITY; I-V MEASUREMENTS; IN-SITU; IV CHARACTERISTICS; LATERAL CURRENTS; N-TYPE DOPING; P-TYPE; PIN DIODE; QUARTZ SUBSTRATE; SI NANOCRYSTAL; SILICON DIOXIDE; SILICON RICH OXIDES; SOLAR-CELL APPLICATIONS; TEMPERATURE DEPENDENT; THIRD GENERATION;

BORON; BORON COMPOUNDS; CELL MEMBRANES; DIODES; NANOCRYSTALS; OPEN CIRCUIT VOLTAGE; OXIDE MINERALS; PHOSPHORUS; PHOTOVOLTAIC CELLS; QUARTZ; SILICA;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350074329 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3240882 Document Type: Article

Times cited : (127)

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