Effects of oxygen addition on electrical properties of silicon quantum dots/amorphous silicon carbide superlattice

Current Applied Physics

Volumn 10, Issue SUPPL. 3, 2010, Pages

  Kurokawa, Yasuyoshi ^a   Yamada, Shigeru ^a   Miyajima, Shinsuke ^a   Yamada, Akira ^a   Konagai, Makoto ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

Crystallization suppression; Silicon quantum dots; The third generation solar cells

Indexed keywords

BARRIER LAYERS; DARK CONDUCTIVITY; ELECTRICAL PROPERTY; OXYGEN ADDITION; OXYGEN ATOM; SI QUANTUM DOT; SIC THIN FILMS; SILICON QUANTUM DOTS; THE THIRD GENERATION SOLAR CELLS; THERMAL-ANNEALING; THIRD GENERATION;

ANNEALING; CRYSTALLIZATION; DEPOSITION; ELECTRIC PROPERTIES; GAS PERMEABLE MEMBRANES; OXYGEN; SEMICONDUCTOR QUANTUM DOTS; SILICON; SILICON CARBIDE; SOLAR CELLS; SUPERLATTICES; THIN FILMS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77955477975     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2010.02.014     Document Type: Conference Paper

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