Phosphorus-doped silicon quantum dots for all-silicon quantum dot tandem solar cells

Solar Energy Materials and Solar Cells

Volumn 93, Issue 9, 2009, Pages 1524-1530

  Hao, X J ^a   Cho, E C ^a   Scardera, G ^a   Shen, Y S ^a   Bellet Amalric, E ^b   Bellet, D ^c   Conibeer, G ^a   Green, M A ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b CEA GRENOBLE   (France)

^c LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

Author keywords

Dark resistivity; Doping; Phosphorus; Si quantum dot; Solar cell

Indexed keywords

DARK RESISTIVITY; DOPED FILMS; DOPING; ENERGY MEASUREMENTS; HIGH-TEMPERATURE ANNEALING; MATRIX; OPTICAL AND ELECTRICAL PROPERTIES; OPTIMAL CONDITIONS; ORDERS OF MAGNITUDE; PHOSPHORUS CONCENTRATION; PHOSPHORUS DIFFUSION; PHOSPHORUS DOPING; PHOSPHORUS-DOPED; PHOTOLUMINESCENCE INTENSITIES; POTENTIAL APPLICATIONS; QUANTUM DOT; QUANTUM-DOT SIZE; RADIATIVE RECOMBINATION; SECONDARY ION MASS SPECTROSCOPY; SI QUANTUM DOT; SPUTTERING PROCESS; TANDEM SOLAR CELLS;

ACTIVATION ENERGY; CELL MEMBRANES; CONCENTRATION (PROCESS); DOPING (ADDITIVES); ELECTRIC PROPERTIES; OPTICAL MULTILAYERS; OPTICAL WAVEGUIDES; PHOSPHORUS; PHOTOVOLTAIC CELLS; SECONDARY ION MASS SPECTROMETRY; SILICON; SILICON COMPOUNDS; SILICON OXIDES; SOLAR CELLS; SOLAR ENERGY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTOR QUANTUM DOTS;

EID: 67649411543     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2009.04.002     Document Type: Article

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