Understanding doping in silicon nanostructures

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 12, Issue 6, 2006, Pages 1585-1590

  Ossicini, Stefano ^a   Iori, Federico ^a   Degoli, Elena ^a   Luppi, Eleonora ^a   Magri, Rita ^a   Poli, Raffaele ^a   Cantele, Giovanni ^b   Trani, Fabio ^b   Ninno, Domenico ^b  

^a UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

^b UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Doping; First principles method; Optical properties; Silicon nanostructures

Indexed keywords

ACTIVATION ENERGY; DOPING (ADDITIVES); IMPURITIES; OPTICAL PROPERTIES; QUANTUM OPTICS; SILICON COMPOUNDS;

FIRST-PRINCIPLES METHOD; PHOTOLUMINESCENCE PROPERTIES; SILICON NANOSTRUCTURES;

NANOSTRUCTURED MATERIALS;

EID: 33845794425     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2006.884087     Document Type: Article

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