Electroluminescence from Si nanocrystal/c-Si heterojunction light-emitting diodes

Applied Physics Letters

Volumn 99, Issue 25, 2011, Pages

  Di, Dawei ^a   Perez Wurfl, Ivan ^a   Wu, Lingfeng ^a   Huang, Yidan ^a,b   Marconi, Alessandro ^c   Tengattini, Andrea ^c   Anopchenko, Aleksei ^c   Pavesi, Lorenzo ^c   Conibeer, Gavin ^a  

^a UNIVERSITY OF NEW SOUTH WALES   (Australia)

^b UNIVERSITY OF SYDNEY   (Australia)

^c UNIVERSITY OF TRENTO   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORBER MATERIAL; BORON-DOPED; ELECTROLUMINESCENCE SPECTRA; P-N HETEROJUNCTIONS; PHOTOVOLTAIC APPLICATIONS; SI NANOCRYSTAL; SILICON NANOCRYSTALS; THIRD GENERATION PHOTOVOLTAICS; WIDE BAND GAP;

BORON; DIODES; ELECTROLUMINESCENCE; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; LIGHT EMITTING DIODES; NANOCRYSTALS; PHOTOVOLTAIC EFFECTS; SILICON; SILICON OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 84555190890     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3671671     Document Type: Article

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