Size, composition, and doping effects on In(Ga)As nanowire/Si tunnel diodes probed by conductive atomic force microscopy

Applied Physics Letters

Volumn 101, Issue 23, 2012, Pages

  Yang, Tao ^a   Hertenberger, Simon ^a   Morkötter, Stefanie ^a   Abstreiter, Gerhard ^a,b   Koblmüller, Gregor ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BIMODAL DISTRIBUTION; CONDUCTIVE ATOMIC FORCE MICROSCOPY; CURRENT MAPPING; DOPING EFFECTS; DOWN-SCALING; ESAKI DIODE; EXCESS CURRENT; FORWARD BIAS; GA CONTENT; INTERBAND; INTERBAND TUNNELING; NEGATIVE DIFFERENTIAL RESISTANCES; P-TYPE SILICON; P-TYPE SUBSTRATES; PEAK CURRENTS; PEAK TO VALLEY CURRENT RATIO; PROFILE CALCULATION; ROOM TEMPERATURE; TUNNEL CURRENTS;

ATOMIC FORCE MICROSCOPY; GALLIUM; MOLECULAR BEAM EPITAXY; NANOWIRES; SEMICONDUCTING INDIUM; TUNNEL DIODES;

GALLIUM ALLOYS;

EID: 84870870027     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4768001     Document Type: Article

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