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Applied Physics Letters

Volumn 94, Issue 22, 2009, Pages

Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness

(2) Luisier, Mathieu a Klimeck, Gerhard a

a Purdue University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE POTENTIALS; GRAPHENE BAND; GRAPHENE NANO-RIBBON; LINE EDGE ROUGHNESS; NANORIBBON; OFF-CURRENT; ON-CURRENT; ON/OFF CURRENT RATIO; PERFORMANCE ANALYSIS; QUANTUM TRANSPORT SIMULATOR; SOURCE-TO-DRAIN TUNNELING; STATISTICAL SAMPLES; SUBTHRESHOLD SLOPE; SWITCHING PERFORMANCE; TIGHT BINDING METHODS; TUNNELING FIELD-EFFECT TRANSISTORS;

DRAIN CURRENT; MOSFET DEVICES; QUANTUM CHEMISTRY; QUANTUM ELECTRONICS; ROUGHNESS MEASUREMENT; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 66749176622 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3140505 Document Type: Article

Times cited : (78)

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