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Applied Physics Letters

Volumn 98, Issue 8, 2011, Pages

Tunnel field-effect transistor using InAs nanowire/Si heterojunction

(2) Tomioka, Katsuhiro a,b Fukui, Takashi a

a HOKKAIDO UNIVERSITY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COHERENT GROWTH; INAS; MISFIT DISLOCATIONS; ON STATE CURRENT; REVERSE BIAS; SELECTIVE AREA GROWTH; SI(111) SUBSTRATE; SUBTHRESHOLD SLOPE; SUPPLY VOLTAGES; SURROUNDING-GATE; SWITCHING BEHAVIORS;

FIELD EFFECT TRANSISTORS; INDIUM ARSENIDE; LANTHANUM COMPOUNDS; NANOWIRES; SEMICONDUCTING INDIUM; TRANSMISSION ELECTRON MICROSCOPY;

HETEROJUNCTIONS;

EID: 79952093691 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3558729 Document Type: Article

Times cited : (120)

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