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Volumn 85, Issue 3, 2004, Pages 407-409

Observation of subsurface monolayer thickness fluctuations in InGaN/GaN quantum wells by scanning capacitance microscopy and spectroscopy

(6) Zhou, X a Yu, E T a Florescu, D b Ramer, J C b Lee, D S b Armour, E A b

a UNIVERSITY OF CALIFORNIA (United States)

b Veeco Compound Semiconductor Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

QUANTUM WELL STRUCTURES; SCANNING CAPACITANCE MICROSCOPY (SCM); SCHOTTKY CONTACTS; SPATIAL RESOLUTIONS;

APPROXIMATION THEORY; CAPACITANCE; CARRIER CONCENTRATION; COMPUTER SIMULATION; ELECTRONIC STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; SENSITIVITY ANALYSIS; SUBSTRATES; SURFACE TOPOGRAPHY; THICKNESS CONTROL;

SEMICONDUCTOR QUANTUM WELLS;

EID: 4043084051 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1773358 Document Type: Article

Times cited : (20)

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