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Volumn 101, Issue 5, 2012, Pages

Diameter dependent optical emission properties of InAs nanowires grown on Si

(10) Koblmuller G a Vizbaras, K a Hertenberger, S a Bolte, S a Rudolph, D a Becker, J a Doblinger M b Amann, M C a Finley, J J a Abstreiter, G a,c

a WALTER SCHOTTKY INSTITUT (Germany)

b UNIVERSITY OF MUNICH (Germany)

c TECHNICAL UNIVERSITY OF MUNICH (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; BAND EDGE; BAND-EDGE EMISSIONS; BLUE SHIFT; CATALYST-FREE; DIAMETER DEPENDENT; EMISSION EFFICIENCIES; INAS; OPTICAL EMISSIONS; QUANTUM CONFINEMENT EFFECTS; RED SHIFT; SI (1 1 1); ZINC-BLENDE;

LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOTOLUMINESCENCE SPECTROSCOPY; SILICON; ZINC SULFIDE;

INDIUM ARSENIDE;

EID: 84864666263 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4739001 Document Type: Article

Times cited : (40)

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