Contact doping of silicon wafers and nanostructures with phosphine oxide monolayers

ACS Nano

Volumn 6, Issue 11, 2012, Pages 10311-10318

  Hazut, Ori ^a   Agarwala, Arunava ^a   Amit, Iddo ^b   Subramani, Thangavel ^a   Zaidiner, Seva ^a   Rosenwaks, Yossi ^b   Yerushalmi, Roie ^a  

^a HEBREW UNIVERSITY OF JERUSALEM   (Israel)

^b TEL AVIV UNIVERSITY   (Israel)

Author keywords

monolayer doping; nanowires; silicon; surface chemistry

Indexed keywords

CAPPING LAYER; CHEMICAL ENVIRONMENT; DONOR SUBSTRATES; DOPANT DISTRIBUTION; DOPING METHODS; DOPING PROCESS; H-TERMINATED SURFACE; INTRINSIC SILICON NANOWIRES; KELVIN PROBE FORCE MICROSCOPY; MOLECULAR PRECURSOR; NANOMETER SCALE STRUCTURE; NANOWIRE DEVICES; NATIVE OXIDES; PHOSPHINE OXIDE; POSTGROWTH DOPING; SHEET RESISTANCE MEASUREMENTS; SI WAFER; SURFACE CONTACT; SURFACE DOPING; UNIFORM DISTRIBUTION; UNIQUE FEATURES;

DECOMPOSITION; DOPING (ADDITIVES); INTERFACES (MATERIALS); MONOLAYERS; NANOPARTICLES; NANOWIRES; PHOSPHORUS; PHOSPHORUS COMPOUNDS; SILICON; SILICON OXIDES; SILICON WAFERS; SUBSTRATES; SURFACE CHEMISTRY;

PROCESS CONTROL;

NANOMATERIAL; OXIDE; PHOSPHINE DERIVATIVE; SILICON;

ARTICLE; CHEMISTRY; CONFORMATION; CRYSTALLIZATION; MACROMOLECULE; MATERIALS TESTING; METHODOLOGY; PARTICLE SIZE; SURFACE PROPERTY; ULTRASTRUCTURE;

CRYSTALLIZATION; MACROMOLECULAR SUBSTANCES; MATERIALS TESTING; MOLECULAR CONFORMATION; NANOSTRUCTURES; OXIDES; PARTICLE SIZE; PHOSPHINES; SILICON; SURFACE PROPERTIES;

EID: 84870437793     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn304199w     Document Type: Article

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