Fabrication of conducting Si nanowire arrays

Journal of Applied Physics

Volumn 96, Issue 10, 2004, Pages 5921-5923

  Beckman, R A ^a   Johnston Halperin, E ^a   Melosh, N A ^a,b   Luo, Y ^a   Green, J E ^a   Heath, J R ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b Dept of Mat Sci and Engineering ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE LENGTHS; NANOSCALE MOSAICS; ULTRADENSE FIELD-EFFECT TRANSISTOR ARRAYS;

BIOSENSORS; CHEMICAL SENSORS; CMOS INTEGRATED CIRCUITS; FABRICATION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); SILICON; SILICON ON INSULATOR TECHNOLOGY; SUPERLATTICES;

NANOSTRUCTURED MATERIALS;

EID: 9944261461     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1801155     Document Type: Article

References (19)

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