Doping of germanium nanowires grown in presence of PH3

Applied Physics Letters

Volumn 89, Issue 26, 2006, Pages

  Tutuc, E ^a   Chu, J O ^a   Ott, J A ^a   Guha, S ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONFORMAL GROWTH; DOPANT PRECURSORS; PHOSPHINES; UNDOPED CORES;

DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; GERMANIUM; GOLD; GROWTH (MATERIALS); PHOSPHORUS COMPOUNDS;

NANOSTRUCTURED MATERIALS;

EID: 33846089804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2410238     Document Type: Article

References (12)

1. R. S. Wagner and W. C. Ellis, Appl. Phys. Lett. 4, 89 (1964).
2. Y. Cui and C. M. Lieber, Science 0036-8075 10.1126/science.291.5505.851 291, 851 (2001); M. K. Sunkara, S. Sharma, R. Miranda, G. Lian, and E. C. Dickey, Appl. Phys. Lett. 79, 1546 (2001).
3. Y. Cui and C. M. Lieber, Science 0036-8075 10.1126/science.291.5505.851 291, 851 (2001); M. K. Sunkara, S. Sharma, R. Miranda, G. Lian, and E. C. Dickey, Appl. Phys. Lett. 79, 1546 (2001).
4. Y. Wu and P. Yang, J. Am. Chem. Soc. 0002-7863 10.1021/ja0059084 123, 3165 (2001); D. W. Wang and H. J. Dai, Angew. Chem., Int. Ed. 1433-7851 10.1002/anie.200290047 41, 4783 (2002); J. L. Taraci, J. W. Dailey, T. Clement, D. J. Smith, J. Drucker, and S. T. Picraux, Appl. Phys. Lett. 0003-6951 10.1063/1.1766076 84, 5302 (2004); T. I. Kamins, X. Li, R. S. Williams, and X. Liu, Nano Lett. 4, 503 (2004).
5. Y. Wu and P. Yang, J. Am. Chem. Soc. 0002-7863 10.1021/ja0059084 123, 3165 (2001); D. W. Wang and H. J. Dai, Angew. Chem., Int. Ed. 1433-7851 10.1002/anie.200290047 41, 4783 (2002); J. L. Taraci, J. W. Dailey, T. Clement, D. J. Smith, J. Drucker, and S. T. Picraux, Appl. Phys. Lett. 0003-6951 10.1063/1.1766076 84, 5302 (2004); T. I. Kamins, X. Li, R. S. Williams, and X. Liu, Nano Lett. 4, 503 (2004).
6. Y. Wu and P. Yang, J. Am. Chem. Soc. 0002-7863 10.1021/ja0059084 123, 3165 (2001); D. W. Wang and H. J. Dai, Angew. Chem., Int. Ed. 1433-7851 10.1002/anie.200290047 41, 4783 (2002); J. L. Taraci, J. W. Dailey, T. Clement, D. J. Smith, J. Drucker, and S. T. Picraux, Appl. Phys. Lett. 0003-6951 10.1063/1.1766076 84, 5302 (2004); T. I. Kamins, X. Li, R. S. Williams, and X. Liu, Nano Lett. 4, 503 (2004).
7. Y. Wu and P. Yang, J. Am. Chem. Soc. 0002-7863 10.1021/ja0059084 123, 3165 (2001); D. W. Wang and H. J. Dai, Angew. Chem., Int. Ed. 1433-7851 10.1002/anie.200290047 41, 4783 (2002); J. L. Taraci, J. W. Dailey, T. Clement, D. J. Smith, J. Drucker, and S. T. Picraux, Appl. Phys. Lett. 0003-6951 10.1063/1.1766076 84, 5302 (2004); T. I. Kamins, X. Li, R. S. Williams, and X. Liu, Nano Lett. 4, 503 (2004).
8. A. B. Greytak, L. J. Lauhon, M. S. Gudiksen, and C. M. Lieber, Appl. Phys. Lett. 84, 4176 (2004).
9. The axial growth along the [111] crystal axis of our Ge nanowires is in the flux limited regime and depends linearly on the Ge H4 partial pressure. The conformal Ge growth is in the reaction limited regime and therefore depends to a lesser extent on the Ge H4 pressure. See, e.g., C.-B. Jin, J.-E. Yang, and M.-H. Jo, Appl. Phys. Lett. 88, 193105 (2005) and references therein.
10. E. Tutuc, S. Guha, and J. O. Chu, Appl. Phys. Lett. 88, 043113 (2006).
11. A. D. Schricker, S. V. Joshi, T. Hanrath, S. K. Banerjee, and B. K. Korgel, J. Phys. Chem. B 110, 6816 (2006).
12. D. B. Cuttriss, Bell Syst. Tech. J. 40, 509 (1961).