Variability impact of random dopant fluctuation on nanoscale junctionless FinFETs

IEEE Electron Device Letters

Volumn 33, Issue 6, 2012, Pages 767-769

  Leung, Greg ^a   Chui, Chi On ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Fin field effect transistor (FinFET); junctionless; random dopant fluctuation (RDF); variability

Indexed keywords

CHANNEL DOPINGS; DRAIN-INDUCED BARRIER LOWERING; DRIVE CURRENTS; FIN FIELD-EFFECT TRANSISTORS; FINFETS; JUNCTIONLESS; NANO SCALE; RANDOM DOPANT FLUCTUATION; TECHNOLOGY COMPUTER AIDED DESIGN; VARIABILITY;

COMPUTER AIDED DESIGN; INTEGRATED CIRCUITS; NANOTECHNOLOGY; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 84861670422     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2012.2191931     Document Type: Article

References (12)

1. J.-P. Colinge, C.-W. Lee, A. Afzalian, N. D. Akhavan, R. Yan, I. Ferain, P. Razavi, B. O'Neill, A. Blake, M. White, A-M. Kelleher, B. McCarthy, and R. Murphy, "Nanowire transistors without junctions," Nat. Nanotechnol., vol. 5, no. 3, pp. 225-229, Mar. 2010.
2. S-J. Choi, D-I. Moon, S. Kim, J. P. Duarte, and Y-K. Choi, "Sensitivity of threshold voltage to nanowire width variation in junctionless transistors," IEEE Electron Device Lett., vol. 32, no. 2, pp. 125-127, Feb. 2011.
3. C.-W. Lee, I. Ferain, A. Afzalian, R. Yan, N. D. Akhavan, P. Razavi, and J.-P. Colinge, "Performance estimation of junctionless multigate transistors," Solid-State Electron., vol. 54, no. 2, pp. 97-103, Feb. 2010.
4. R. Rios, A. Cappellani, M. Armstrong, A. Budrevich, H. Gomez, R. Pai, N. Rahhal-Orabi, and K. Kuhn, "Comparison of junctionless and conventional trigate transistors with Lg down to 26 nm," IEEE Electron Device Lett., vol. 32, no. 9, pp. 1170-1172, Sep. 2011.
5. R. Trevisoli, R. Doria, M. de Souza, andM. Pavanello, "Threshold voltage in junctionless nanowire transistors," Semicond. Sci. Technol., vol. 26, no. 10, p. 105 009, Oct. 2011.
6. G. Leung and C. O. Chui, "Variability of inversion-mode and junctionless FinFETs due to line edge roughness," IEEE Electron Device Lett., vol. 32, no. 11, pp. 1489-1491, Nov. 2011.
7. M. Aldegunde, A. Martinez, and J. R. Barker, "Study of discrete dopinginduced variability in junctionless nanowire MOSFETs using dissipative quantum transport simulations," IEEE Electron Device Lett., vol. 33, no. 2, pp. 194-196, Feb. 2012.
8. Sentaurus TCAD User Manual, Synopsys, Inc., Mountain View, CA, Version F-2011.09.
9. International Technology Roadmap for Semiconductors, Semicond. Ind. Assoc., San Jose, CA, 2009.
10. N. Sano, K. Matsuzawa, M. Mukai, and N. Nakayama, "On discrete random dopant modeling in drift-difussion simulations: Physical meaning of 'atomistic' dopants," Microelectron. Reliab., vol. 42, no. 2, pp. 189-199, Feb. 2002. (Pubitemid 34182180)
11. A. Asenov, "Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 μm MOSFETs: A 3-D 'atomistic' simulation study," IEEE. Trans. Electron Devices, vol. 45, no. 12, pp. 2505-2513, Dec. 1998. (Pubitemid 128736693)
12. M. J. M. Pelgrom, A. C. J. Duinmaijer, and A. P. G. Welbers, "Matching properties of MOS transistors," IEEE J. Solid-State Circuits, vol. 24, no. 5, pp. 1433-1439, Oct. 1989.