Wafer-scale, sub-5 nm junction formation by monolayer doping and conventional spike annealing

Nano Letters

Volumn 9, Issue 2, 2009, Pages 725-730

  Ho, Johnny C ^a,b   Yerushalmi, Roie ^a,b,f   Smith, Gregory ^c   Majhi, Prashant ^c   Bennett, Joseph ^d   Halim, Jeffri ^e   Faifer, Vladimir N ^e   Javey, Ali ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^c SEMATECH   (United States)

^d SVTC Technologies   (United States)

^e Frontier Semiconductor Inc   (United States)

^f HEBREW UNIVERSITY OF JERUSALEM   (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

4-IN. SI; BORON ATOMS; JUNCTION FORMATIONS; JUNCTION LEAKAGE CURRENTS; MOLECULAR MONOLAYERS; NONCONTACT; SECONDARY IONS; SHEET RESISTANCE MEASUREMENTS; SPIKE ANNEAL; SPIKE ANNEALING; ULTRA SHALLOW JUNCTIONS; WAFER-SCALE;

BORON; BORON COMPOUNDS; DOPING (ADDITIVES); ELECTRIC RESISTANCE; HIGH PERFORMANCE LIQUID CHROMATOGRAPHY; LEAKAGE CURRENTS; PHOSPHORUS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SHEET RESISTANCE; SILICON WAFERS;

SEMICONDUCTOR JUNCTIONS;

EID: 65249164818     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/n18032526     Document Type: Article

References (25)

1. Peercy, P. S. The drive to miniaturization. Nature 2000, 406, 1023-1026.
2. Claeys, C. Technological challenges of advanced CMOS processing and their impact on design aspects. 17th International Conference Proceedings on VLSI Design 2004, 2004, 275-282.
3. Stolk, P. A.; Gossmann, H. J.; Eaglesham, D. J.; Poate, J. M. Implantation and transient boron diffusion: the role of Si self interstitials. Nucl. lustrum. Methods Phys. Res., Sect. B 1995, 96, 187.
4. 22 ion implantation. Nucl Instrum. Methods Phys. Res., Sect. B 2005, 257, 25-29.
5. MacCrimmon, R.; Hautala, J.; Gwinn, M.; Sherman, S. Gas cluster ion beam infusion processing of semiconductors. Nucl. Instrum. Methods Phys. Res., Sect. B 2006, 242, 427-30.
6. Yon, G. H.; Buh, G. H.; Park, T.; Hong, S. J.; Shin, Y. G.; Chung, U.; Moon, J. T. Ultra Shallow Junction Formation Using Plasma Doping and Laser Annealing for Sub-65 nm Technology Nodes. Jpn. Appl. Phys. 2006, 45, 2961-2964.
7. Ito, T.; Iinuma, T.; Murakoshi, A.; Akutsu, H.; Suguro, K.; Arikado, T.; Okumura, K.; Yoshioka, M.; Owada, T.; Imaoka, Y.; Murayama, H.; Kusuda, T. 10-15 nm Ultrashallow Junction Formation by Flash-Lamp Annealing, jpn. J. Appl. Phys. 2002, 41, 2394-98.
8. Poon, C. H.; Cho, B. J.; Lu, Y. F.; Bhat, M.; See, A. Multiple-pulse laser annealing of preamorphized silicon for ultrashallow boron junction formation. J. Vac. Sci. Technol., B 2003, 21 (2), 706-709.
9. Ho, J. C; Yerushalmi, R.; Jacobson, Z. A.; Fan, Z.; Alley, R. L.; Javey, A. Controlled nanoscale doping of semiconductors via molecular monolayers. Nat. Mater. 2008, 7 (1), 62-67.
10. 2 Sutfaces. Angew. Chem., Int. Ed. 2008, 47, 4440-4442.
11. Bentzen, A.; Schubert, G.; Christensen, J. S.; Svensson, B. G.; Holt, A. Influence of temperature during phosphorus emitter diffusion from a spray-on source in multicrystalline silicon solar cell processing. Prog. Phptovoltaics 2007, 15, 281-289.
12. Uematsu, M. Simulation of boron, phosphorus, and arsenic diffusion in silicon based on an integrated diffusion model, and the anomalous phosphorus diffusion mechanism. J. Appl. Phys. 1997, 82-5, 2229.
13. Trumbore, F. A. Solid Solubilities of Impurity elements in Ge and Si. Bell Syst. Tech. J. 1960, 35, 205.
14. Borisenko, V. E.; Yudin, S. G. Steady-State Solubilities of Subsitu-tional Impurities in Si. Phys. Status Solidi A 1987, 1 (101), 123-127.
15. Clarysse, T.; Vanhaeren, D.; Vandervorst, W. Impact of probe penetration on the electrical characterization of sub-50 nm profiles. J. Vac. Sci. Technol., B 2002, 20 (1), 459-66.
16. Faifer, V. N.; Current, M. I.; Wong, T. M. H.; Souchkov, V. V. Noncontact sheet resistance and leakage current mapping for ultra-shallow junctions. J. Vac. Sci. Technol, B. 2008, 26 (1), 420-24.
17. Faifer, V. N.; Current, M. L.; Nguyen, T.; Wong, T. M. H.; Souchkov, V. V. Non-contact measurement of sheet resistance and leakage current: applications for USJ-SDE/halo junctions. Ext. Abs. of the 5th IWJT, IEEE 2005, pp 45-8.
18. Since the 4 in. wafer is placed on a support substrate during the spike annealing (the tool was designed to handle 6 in. wafers), this may also contribute to the variation pattern.
19. Collarta, E. J. H.; Felch, S. B.; Pawlak, B. J.; Absil, P. P.; Severi, S.; Janssens, T.; Vandervorst, W. Co-implantation with conventional spike anneal solutions for 45 nm n-type metal-oxide-semiconductor ultrashallow junction formation. .J. Vac. Sci. Technol, B. 2006, 24 (1), 507-9.
20. Augendre, E.; Pawlak, B. J.; Kubicek, S.; Hoffmann, T.; Chiarella, T.; Kerner, C: Severi, S.; Falepin. A.; Ramos. J.; De Keersgieter, A.; Eyben, P.: Vanhaeren, D.; Vandervorst, W.; Jurczak, M.; Absil, P.; Biesemans, S. Superior N- and P-MOSFET scalability using carbon co-implantation and spike annealing. Solid-State Electron. 2007, 51 (11-12), 1432-6.
21. Lee, S. W.; Jeong, J. Y.; Park, C. S.; Kim, J. H.; Ji, J. Y.; Choi, J. Y.; Lee, Y. J.; Han, S. H.; Kim, K. M.; LeeW. J.; Rha, S. K.; Oh, J. K. The study of plasma doping process for ultra shallow junctions. Ext. Abs. of the 7th IWJT, IEEE 2007, 67-8.
22. Cagnat, N.; Laviron, C: Mathiot, D.; Rando, C: Juhel, M. Shallow Junction Engineering by Phosphorus and Carbon Co-implantation: Optimization of Carbon Dose and Energy. Mater. Res. Soc. Symp. Proc. 2007, 994, 0994-F08-04.
23. Pawlak, B. J.; Duffy, R.; Augendre, E.; Severi, S.; Janssens, T.; Absil, P.; Vandervorst, W.; Collart, E.; Felch, S.; Schreutelkamp, R.; Cowern, N. The Carbon Co-Implant with Spike RTA Solution for Phosphorus Extension. Mater. Res. Soc. Symp. Proc. 2006, 912, 0912-C01-06.
24. Beebe, M.; Bennett, J.; Barnett, J.; Berlin, A.; Yoshinaka, T. Quantifying residual and surface carbon using polyencapsulation SIMS. Appl. Surf. Sci. 2004, 231-32, 716-19.
25. Chen, J. T. C; Dimitrova, T.; Dimitrov, D. A New Method for Mapping Ultra-Shallow Junction Leakage Currents. International Workshop on IWJT, IEEE 2006, 100.