Correlation between in content and emission wavelength of In xGa 1-xN/GaN nanowire heterostructures

Nanotechnology

Volumn 23, Issue 45, 2012, Pages

  Wolz M ^a   Lahnemann J ^a   Brandt, O ^a   Kaganer, V M ^a   Ramsteiner, M ^a   Pfuller C ^a   Hauswald, C ^a   Huang, C N ^a   Geelhaar, L ^a   Riechert, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; EMISSION ENERGIES; EMISSION WAVELENGTH; GAN NANOWIRES; MULTI QUANTUM WELLS; NANOWIRE HETEROSTRUCTURES; ONE-DIMENSIONAL MODEL; ROOM TEMPERATURE; STATISTICAL INFORMATION; THREE-DIMENSIONAL STRUCTURE; TRANSITION ENERGY;

GALLIUM NITRIDE; INDIUM; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; SEMICONDUCTOR QUANTUM WELLS; THREE DIMENSIONAL; X RAY DIFFRACTION;

NANOWIRES;

EID: 84867813058     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/45/455203     Document Type: Article

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