Growth mechanism and properties of InGaN insertions in GaN nanowires

Nanotechnology

Volumn 23, Issue 13, 2012, Pages

  Tourbot, G ^a   Bougerol, C ^b   Glas, F ^c   Zagonel, L F ^d   Mahfoud, Z ^d   Meuret, S ^d   Gilet, P ^a   Kociak, M ^d   Gayral, B ^a   Daudin, B ^a  

^a CEA GRENOBLE   (France)

^b UNIV GRENOBLE ALPES   (France)

^c CNRS   (France)

^d UNIVERSITÉ PARIS SUD   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EDX ANALYSIS; ENHANCED LUMINESCENCE; GAN NANOWIRES; GROWTH DIRECTIONS; GROWTH MECHANISMS; INHOMOGENEITIES; ISLAND NUCLEATION; SINGLE NANOWIRES; THEORETICAL PREDICTION;

GALLIUM NITRIDE; LUMINESCENCE; NUCLEATION;

NANOWIRES;

EID: 84858397658     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/23/13/135703     Document Type: Article

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