Analyzing the growth of InxGa1-xN/GaN superlattices in self-induced GaN nanowires by x-ray diffraction

Applied Physics Letters

Volumn 98, Issue 26, 2011, Pages

  Wolz M ^a   Kaganer, V M ^a   Brandt, O ^a   Geelhaar, L ^a   Riechert, H ^a  

^a PAUL DRUDE INSTITUT FÜR FESTKÖRPERELEKTRONIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AXIAL GROWTH; GA DIFFUSION; GAN NANOWIRES; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SUPERLATTICE PERIODS;

DIFFRACTION; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; X RAY DIFFRACTION;

INDIUM;

EID: 79960089450     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3604810     Document Type: Article

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