Improved performance of GeON as charge storage layer in flash memory by optimal annealing

Microelectronics Reliability

Volumn 52, Issue 11, 2012, Pages 2597-2601

  Tao, Q B ^a   Lai, P T ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING TEMPERATURES; CHARGE STORAGE; CHARGE TRAP; CHEMICAL COMPOSITIONS; LOW-VOLTAGE; MEMORY APPLICATIONS; MEMORY WINDOW; OPTIMAL ANNEALING; PHYSICAL STRUCTURES;

ANNEALING; OPTIMIZATION; PHOTOELECTRONS; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

FLASH MEMORY;

EID: 84867582017     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.06.112     Document Type: Article

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