Novel SONOS-type nonvolatile memory device with suitable band offset in HfAlO charge-trapping layer

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2007, Pages

  Tsai, Ping Hung ^a   Chang Liao, Kuei Shu ^a   Liu, Chu Yung ^a   Wang, Tien Ko ^a   Tzeng, P J ^b   Lee, L S ^b   Tsai, M J ^b  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING; FLASH MEMORY; HAFNIUM COMPOUNDS; RELIABILITY ANALYSIS;

BAND OFFSET; CHARGE TRAPPING LAYERS; HIGH SPEED OPERATION;

NONVOLATILE STORAGE;

EID: 34548827598     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/VTSA.2007.378901     Document Type: Conference Paper

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