Annealing of Al2O3 thin films prepared by atomic layer deposition

Journal of Physics D: Applied Physics

Volumn 40, Issue 12, 2007, Pages 3707-3713

  Zhang, L ^a   Jiang, H C ^a   Liu, C ^a   Dong, J W ^b   Chow, P ^b  

^a WUHAN UNIVERSITY   (China)

^b SVT ASSOCIATES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; ATOMIC LAYER DEPOSITION; FULL WIDTH AT HALF MAXIMUM; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; SCANNING ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

ANNEALED SAMPLES; OPTIMAL TRANSITION TEMPERATURE;

THIN FILMS;

EID: 34547247841     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/40/12/025     Document Type: Article

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