Interfacial transition regions at germanium/Hf oxide based dielectric interfaces: Qualitative differences between non-crystalline Hf Si oxynitride and nanocrystalline HfO2 gate stacks

Microelectronic Engineering

Volumn 86, Issue 3, 2009, Pages 224-234

  Lucovsky, G ^a   Lee, S ^a   Long, J P ^a   Seo, H ^a   Luning J ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b SLAC NATIONAL ACCELERATOR LABORATORY   (United States)

Author keywords

Di vacancy defects; Ge substrates; High K gate dielectrics; Interfacial transition regions; MOS devices; Native Ge dielectrics; Spectroscopic ellipsometry; X ray absorption spectroscopy

Indexed keywords

ABSORPTION; ABSORPTION SPECTROSCOPY; CRYSTALLINE MATERIALS; DIELECTRIC DEVICES; DIELECTRIC MATERIALS; ELECTROMAGNETIC WAVE ABSORPTION; ELLIPSOMETRY; ENERGY ABSORPTION; FIELD EFFECT TRANSISTORS; GATES (TRANSISTOR); GERMANIUM; HAFNIUM; HAFNIUM COMPOUNDS; METALLIC COMPOUNDS; MOS CAPACITORS; MOS DEVICES; NANOCRYSTALLINE ALLOYS; NANOCRYSTALLINE MATERIALS; NITRIDES; PROGRAMMING THEORY; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SILICON ALLOYS; SPECTROSCOPIC ANALYSIS; SPECTROSCOPIC ELLIPSOMETRY; SUBSTRATES; TRANSITION METALS; VACANCIES; X RAY ABSORPTION; X RAY ABSORPTION SPECTROSCOPY; X RAY SPECTROSCOPY;

DI-VACANCY DEFECTS; GE SUBSTRATES; HIGH-K GATE DIELECTRICS; INTERFACIAL TRANSITION REGIONS; NATIVE GE DIELECTRICS;

GATE DIELECTRICS;

EID: 59049107226     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.05.023     Document Type: Article

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