SCOPUS 정보 검색 플랫폼

Volumn 2, Issue 26, 2012, Pages 9873-9880

Highly conducting phosphorous doped n-type nc-Si:H films by HW-CVD for c-Si heterojunction solar cells

(9) Waman, Vaishali S a Kamble, Mahesh M a Ghosh, Sanjay S a Mayabadi, Azam a Sathe, Vasant G b Pathan, Habib M a Shinde, Shashikant D a Adhi, Kiran P a Jadkar, Sandesh R a

a UNIVERSITY OF PUNE (India)

b UGC DAE CONSORTIUM FOR SCIENTIFIC RESEARCH (India)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; DARK CONDUCTIVITY; GASPHASE; HALL MEASUREMENTS; HETEROJUNCTION SOLAR CELLS; HIGH DEPOSITION RATES; HOT WIRE CHEMICAL VAPOR DEPOSITION; HYDROGEN CONTENTS; HYDROGENATED NANOCRYSTALLINE SILICON (NC-SI:H); LOW SUBSTRATE TEMPERATURE; NANOCRYSTALLINE SI; NC-SI:H; PHOSPHOROUS ATOMS; PHOTOVOLTAIC PERFORMANCE; SILICON HETEROJUNCTIONS; THIN FILM TANDEMS; UV VISIBLE SPECTROSCOPY; XRD;

ACTIVATION ENERGY; CHEMICAL VAPOR DEPOSITION; CONVERSION EFFICIENCY; ELECTRIC PROPERTIES; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HETEROJUNCTIONS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; METALLIC FILMS; OPTIMIZATION; PHOSPHORUS; RAMAN SPECTROSCOPY; SOLAR CELLS; ULTRAVIOLET VISIBLE SPECTROSCOPY;

SILICON;

EID: 84867360514 PISSN: None EISSN: 20462069 Source Type: Journal
DOI: 10.1039/c2ra21618c Document Type: Article

Times cited : (8)

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