Maximization of the open circuit voltage for hydrogenated amorphous silicon n-i-p solar cells by incorporation of protocrystalline silicon p-type layers

Applied Physics Letters

Volumn 81, Issue 7, 2002, Pages 1258-1260

  Koval, R J ^a,b   Chen, Chi ^a,b   Ferreira, G M ^a,b   Ferlauto, A S ^a,b   Pearce, J M ^a,b   Rovira, P I ^a,b   Wronski, C R ^a,b   Collins, R W ^a,b  

^a Center for Thin Film Devices   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; FLOW RATIOS; GROWTH REGIME; HYDROGENATED AMORPHOUS SILICON (A-SI:H); I-LAYER; P-LAYER; P-TYPE; PROTOCRYSTALLINE; PROTOCRYSTALLINE SILICON; THICKNESS-DEPENDENT TRANSITION;

CHEMICAL VAPOR DEPOSITION; ELECTRIC NETWORK ANALYSIS; HYDROGEN; HYDROGENATION; OPEN CIRCUIT VOLTAGE; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SILICON; VANADIUM;

AMORPHOUS SILICON;

EID: 79956058191     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1499735     Document Type: Article

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