Nanostructured thin films for multiband-gap silicon triple junction solar cells

Thin Solid Films

Volumn 516, Issue 20, 2008, Pages 6818-6823

  Schropp, R E I ^a   Li, H ^a   Franken, R H ^a   Rath, J K ^a   van der Werf, C H M ^a   Schuttauf J W A ^a   Stolk, R L ^a  

^a UTRECHT UNIVERSITY   (Netherlands)

Author keywords

Efficiency; Light scattering; Multijunction; Nanocrystalline silicon; Nanostructure; Solar cells; Stability

Indexed keywords

CELLS; CHEMICAL VAPOR DEPOSITION; CLARIFICATION; DIRECT ENERGY CONVERSION; GALLIUM ALLOYS; IRON; PHOTORESISTS; PHOTOVOLTAIC CELLS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; POWER SPECTRAL DENSITY; SILICON; SOLAR CELLS; SOLAR ENERGY; SOLAR EQUIPMENT; STAINLESS STEEL; SURFACE ROUGHNESS; THICK FILMS; THIN FILMS; TWO DIMENSIONAL;

(100) SILICON; ACTIVE LAYERS; AFM IMAGING; BACK CONTACTS; BACK REFLECTOR (BR); BOTTOM CELLS; CURRENT ENHANCEMENT; HOT WIRE CVD (HWCVD); LONG WAVELENGTH (LW); MULTI BANDS; NANO STRUCTURING; NANO-STRUCTURED THIN FILMS; POWER SPECTRAL DENSITY FUNCTION (PSDF); RMS ROUGHNESS; SINGLE JUNCTION; TRIPLE JUNCTION (TJ); TRIPLE JUNCTION (TJ) CELLS; TRIPLE-JUNCTION SOLAR CELLS;

CURRENT DENSITY;

EID: 45849142616     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.12.089     Document Type: Article

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