Nanocrystalline silicon films obtained by plasma enhanced chemical vapor deposition under time-modulated-microwave-power discharge conditions

Technical Physics Letters

Volumn 28, Issue 4, 2002, Pages 305-307

  Pevtsov, A B ^a   Feoktistov, N A ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0036014759     PISSN: 10637850     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1476999     Document Type: Article

References (13)

1. L. Brus, Appl. Phys. A A53 (6), 465 (1991).
2. C. Weisbuch, Optoelectron., Devices Technol. 8 (4), 523 (1993).
3. T. Hamasaki, H. Kurata, M. Hirose, and Y. Osaka, Appl. Phys. Lett. 37 (12), 1084 (1980).
4. A.T. Voutsas, M.K. Hatalis, J. Boyce, and A. Chiang, J. Appl. Phys. 78, 6999 (1995).
5. Ch. Yin, X. Liu, and Y. He, J. Appl. Phys. 75, 797 (1994).
6. Z. Iqbal and S. Veprek, J. Phys. C 15, 377 (1982).
7. M. Otobe and S. Oda, Jpn. J. Appl. Phys. 31 (1), 1948 (1992).
8. G.N. Parsons, J.J. Boland, and J.C. Tsang, Jpn. J. Appl. Phys. 31 (1), 1943 (1992).
9. S. Koynov, R. Schwarz, T. Fisher, et al., Jpn. J. Appl. Phys. 33 (1), 4534 (1994).
10. P. Roca and I. Cabarrocas, Mater. Res. Soc. Symp. Proc. 507, 855 (1998).
11. N. Itagaki, A. Fukuda, T. Yoshizawa, et al., Surf. Coat. Technol. 131, 54 (2000).
12. V.G. Golubev, V. Yu. Davydov, A.V. Medvedev, et al., Fiz. Tverd. Tela (St. Petersburg) 39, 1348 (1997) [Phys. Solid State 39, 1197 (1997)].
13. D.E. Aspnes, Thin Solid Films 89, 249 (1982).