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Thin Solid Films

Volumn 395, Issue 1-2, 2001, Pages 310-314

Growth of device quality p-type μc-Si:H films by hot-wire CVD for a-Si pin and c-Si heterojunction solar cells

(4) Mukherjee, C a Weber, U a Seitz, H a Schroder B a

a Rheinland Pfälzische Technische Universität Kaiserslautern Landau (Germany)

Author keywords

Dark conductivity; Hot wire CVD; Microcrystalline; Solar cells

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CHEMICAL VAPOR DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; FILM GROWTH; HETEROJUNCTIONS; SEMICONDUCTING SILICON; SOLAR CELLS; SUBSTRATES; THICK FILMS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

DARK CONDUCTIVITY; HOT WIRE DEPOSITION;

SEMICONDUCTING FILMS;

EID: 0035801182 PISSN: 00406090 EISSN: None Source Type: Journal
DOI: 10.1016/S0040-6090(01)01283-4 Document Type: Conference Paper

Times cited : (19)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.