High quality Ge thin film grown by ultrahigh vacuum chemical vapor deposition on GaAs substrate

Applied Physics Letters

Volumn 98, Issue 16, 2011, Pages

  Tang, Shih Hsuan ^a   Chang, Edward Yi ^a   Hudait, Mantu ^b   Maa, Jer Shen ^a   Liu, Chee Wee ^c   Luo, Guang Li ^d   Trinh, Hai Dang ^a   Su, Yung Hsuan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b Virginia Polytechnic Institute and State University   (United States)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d NATIONAL NANO DEVICE LABORATORIES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

1550 NM; DIRECT BAND GAP; ELECTROCHEMICAL CAPACITANCE VOLTAGE; ELECTRONIC DEVICE; GAAS; GAAS SUBSTRATES; GE FILMS; GE THIN FILMS; HIGH CRYSTALLINITY; HIGH QUALITY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; N-CHANNEL; P CHANNEL DEVICE; SELF-DOPING; SMOOTH SURFACE; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION; VALENCE BAND OFFSETS;

ARSENIC; ATOMIC FORCE MICROSCOPY; CHEMICAL VAPOR DEPOSITION; DEPOSITION; EPITAXIAL FILMS; FIELD EFFECT TRANSISTORS; GALLIUM ARSENIDE; GERMANIUM; MOSFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; ULTRAHIGH VACUUM; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

GALLIUM ALLOYS;

EID: 79955447364     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3580605     Document Type: Article

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