Hole mobility in pseudomorphic InGaSb quantum well modulation doped with carbon

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 3, 2010, Pages

  Liao, Chichih ^a   Cheng, K Y ^a  

^a University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BITS; CARRIER CONCENTRATION; DOPING (ADDITIVES); GALLIUM; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS;

ALSB BARRIERS; CBR; DELTA-DOPING; GROUP III; MODULATION-DOPED; P-TYPE DOPING; QUANTUM WELL; QUANTUM WELL STRUCTURES; SHEET CARRIER CONCENTRATION;

HOLE MOBILITY;

EID: 77952989912     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.3358291     Document Type: Conference Paper

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