Effect of temperature on the mutual diffusion of Ge/GaAs and GaAs/Ge

Journal of Crystal Growth

Volumn 318, Issue 1, 2011, Pages 367-371

  Bosi, Matteo ^a   Attolini, Giovanni ^a   Ferrari, Claudio ^a   Frigeri, Cesare ^a   Calicchio, Marco ^a   Rossi, Francesca ^a   Vad, Kálmán ^b   Csik, Attila ^b   Zolnai, Zsolt ^c  

^a IMEM CNR   (Italy)

^b INSTITUTE OF EXPERIMENTAL MEDICINE   (Hungary)

^c RESEARCH INSTITUTE FOR TECHNICAL PHYSICS AND MATERIALS SCIENCE   (Hungary)

Author keywords

A1. Characterization; A1. Diffusion; A3. Vapor phase epitaxy; B2. Semiconducting germanium

Indexed keywords

A1. CHARACTERIZATION; A1. DIFFUSION; A3. VAPOR PHASE EPITAXY; B2. SEMICONDUCTING GERMANIUM; CRYSTAL QUALITIES; DIFFUSION PROBLEMS; DIFFUSION PROFILES; DIFFUSIVITIES; EFFECT OF TEMPERATURE; EPILAYERS GROWN; GAAS/GE; HIGH RESOLUTION X RAY DIFFRACTION; HYDROGEN ATMOSPHERE; INTER-DIFFUSION; LOW PRESSURES; LOW TEMPERATURE BUFFER LAYERS; LOW-TEMPERATURE GAAS; METAL-ORGANIC VAPOR PHASE EPITAXY; MUTUAL DIFFUSION; SAMPLE PREPARATION; SECONDARY NEUTRAL MASS SPECTROMETRY; SUBSTRATE TEMPERATURE; TRIMETHYL GALLIUM;

BUFFER LAYERS; DIFFUSION; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MASS SPECTROMETRY; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL WAVEGUIDES; SEMICONDUCTING GERMANIUM; SEMICONDUCTOR QUANTUM WELLS; VAPORS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

ATMOSPHERIC TEMPERATURE;

EID: 79952738502     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2010.10.101     Document Type: Conference Paper

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