SCOPUS 정보 검색 플랫폼

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 507-512

Vertical electron transport study in GaN/AlN/GaN heterostructures

(3) Leconte, S a Monroy, E a Gerard J M a

a UNIV GRENOBLE ALPES (France)

Author keywords

Conductive atomic force microscopy; GaN; Resonant tunneling diode; Two dimensional electron gas

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON GAS; ELECTRON TRANSPORT PROPERTIES; ELECTRONIC STRUCTURE; GALLIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; RESONANT TUNNELING;

CONDUCTIVE ATOMIC FORCE MICROSCOPY; GAN; RESONANT TUNNELING DIODES; TWO DIMENSIONAL ELECTRON GAS;

HETEROJUNCTIONS;

EID: 33845208794 PISSN: 07496036 EISSN: 10963677 Source Type: Journal
DOI: 10.1016/j.spmi.2006.10.008 Document Type: Article

Times cited : (6)

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