Development of high-efficiency GaN-HEMT amplifier for mobile WiMAX

Fujitsu Scientific and Technical Journal

Volumn 44, Issue 3, 2008, Pages 333-339

  Kikkawa, Toshihide ^a,b,c,d   Iwai, Taisuke ^a,b   Ohki, Toshihiro ^a,c  

^a FUJITSU LABORATORIES LTD   (Japan)

^b IEEE

^c JAPAN SOCIETY OF APPLIED PHYSICS   (Japan)

^d Institute of Electronics   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BASE STATIONS; HIGH-EFFICIENCY AMPLIFIERS; POWER CONSUMPTION;

AMPLIFIERS (ELECTRONIC); CHANNEL ESTIMATION; ELECTRIC CONDUCTIVITY; ELECTRIC POWER UTILIZATION; ELECTRON MOBILITY; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; HETEROJUNCTION BIPOLAR TRANSISTORS; INTEROPERABILITY; IONIZATION OF GASES; NITRIDES; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 50649111464     PISSN: 00162523     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (8)

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8. Fujitsu: KDDI and Fujitsu Develop Practical-Use High-Efficiency Amplifier for Mobile WiMAX. http://www.fujitsu.com/global/news/pr/archives/month/2007/ 20070302-01.html