On the reverse gate leakage current of AlGaN/GaN high electron mobility transistors

Applied Physics Letters

Volumn 97, Issue 15, 2010, Pages

  Yan, Dawei ^a   Lu, Hai ^a   Cao, Dongsheng ^a   Chen, Dunjun ^a   Zhang, Rong ^a   Zheng, Youdou ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; ELECTROSTATIC ANALYSIS; EMISSION CURRENT; EMISSION OF ELECTRON; HIGH-FREQUENCY CAPACITANCE-VOLTAGE MEASUREMENTS; NEAR-SURFACE; POLARIZATION EFFECT; REVERSE BIAS VOLTAGE; REVERSE GATE; REVERSE POLARIZATION; SCHOTTKY CONTACTS; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; THREADING DISLOCATION; TUNNELING CURRENT; ZERO BIAS;

BIAS VOLTAGE; ELECTRON MOBILITY; GALLIUM NITRIDE; LEAKAGE CURRENTS; POLARIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77958087267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3499364     Document Type: Article

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