Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures

Applied Physics Letters

Volumn 100, Issue 15, 2012, Pages

  Pandey, S ^a   Cavalcoli, D ^a   Fraboni, B ^a   Cavallini, A ^a   Brazzini, T ^b   Calle, F ^b  

^a UNIVERSITY OF BOLOGNA   (Italy)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALN LAYERS; ALN/GAN; CHARGED DISLOCATIONS; DONOR STATE; METAL-SEMICONDUCTOR JUNCTIONS; POOLE-FRENKEL EMISSION; REVERSE-BIAS; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY JUNCTIONS; SURFACE TRAP-STATES; TRANSPORT MECHANISM; TRAP STATE;

HETEROJUNCTIONS; SURFACE STATES; TWO DIMENSIONAL ELECTRON GAS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84859786758     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4703938     Document Type: Article

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