AlGaN/GaN high-electron-mobility transistors fabricated through a au-free technology

IEEE Electron Device Letters

Volumn 32, Issue 5, 2011, Pages 623-625

  Lee, Hyung Seok ^a   Lee, Dong Seup ^a   Palacios, Tomas ^a  

^a Department of Electrical Engineering and Computer Science   (United States)

Author keywords

2 D electron gas (2DEG); GaN; high electron mobility transistor (HEMT); ohmic contact; recess etch

Indexed keywords

2-D ELECTRON GAS (2DEG); ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; BREAKDOWN VOLTAGE; CMOS-COMPATIBLE TECHNOLOGY; FABRICATION TECHNOLOGIES; FORWARD VOLTAGE DROPS; GAN; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); METALLIZATIONS; OHMIC RECESS; RECESS ETCH; RISK OF CONTAMINATION; SCHOTTKY CONTACTS;

CONTACT RESISTANCE; ELECTRIC CONTACTORS; ELECTRON GAS; ELECTRONS; FABRICATION; GALLIUM NITRIDE; OHMIC CONTACTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SILICON WAFERS; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955549888     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2114322     Document Type: Article

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