Study of ohmic contact formation on AlGaN/GaN HEMT with AlN spacer on silicon substrate

European Microwave Week 2009, EuMW 2009: Science, Progress and Quality at Radiofrequencies, Conference Proceedings - 4th European Microwave Integrated Circuits Conference, EuMIC 2009

Volumn , Issue , 2009, Pages 136-139

  Gerbedoen, J C ^a   Soltani, A ^a   Mattalah, M ^a   Telia, A ^b   Troadec, D ^a   Abdallah, B ^c   Gautron, E ^c   De Jaeger, J C ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b Universite Mentouri Constantine   (Algeria)

^c UNIVERSITÉ DE NANTES   (France)

Author keywords

Conduction mechanism; GaN; HEMTs; Ohmic contact

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; ELECTRIC CONTACTORS; GALLIUM NITRIDE; HIGH ELECTRON MOBILITY TRANSISTORS; MICROWAVE INTEGRATED CIRCUITS; MICROWAVES; OHMIC CONTACTS; SEMICONDUCTOR ALLOYS; SILICON;

ALGAN/ALN/GAN; ALGAN/GAN HEMTS; CONDUCTION MECHANISM; FIELD EFFECTS; METALLISATION; OHMIC BEHAVIOUR; OHMIC CONTACT FORMATION; SILICON SUBSTRATES;

III-V SEMICONDUCTORS;

EID: 72449152818     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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