Microstructure and current transport in Ti/Al/Ni/Au ohmic contacts to n-type AlGaN epilayers grown on Si(111)

Superlattices and Microstructures

Volumn 40, Issue 4-6 SPEC. ISS., 2006, Pages 373-379

  Roccaforte, F ^a   Iucolano, F ^a   Alberti, A ^a   Giannazzo, F ^a   Puglisi, V ^b   Bongiorno, C ^a   Di Franco, S ^a   Raineri, V ^a  

^a CNR IMM   (Italy)

^b STMICROELECTRONICS   (Italy)

Author keywords

AlGaN; C AFM; Ohmic contacts; Ti Al Ni Au

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TRANSPORT PROPERTIES; EPITAXIAL GROWTH; HEAT TREATMENT; MICROSTRUCTURE; SEMICONDUCTING ALUMINUM COMPOUNDS; TITANIUM ALLOYS;

CONTACT STACKS; GRAIN LOCATION; NANOSCOPIC CURRENT FLOW; RESISTIVITY MEASUREMENT;

OHMIC CONTACTS;

EID: 33845186798     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.06.017     Document Type: Article

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