Large enhancement of interband tunneling current densities of over 105 A/cm2 in In0.53Ga0.47As-based surface tunnel transistors

IEEE Electron Device Letters

Volumn 18, Issue 5, 1997, Pages 225-227

  Uemura, Tetsuya ^a   Baba, Toshio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT OSCILLATIONS; CURRENT DENSITY; ELECTRON TUNNELING; FREQUENCIES; NEGATIVE RESISTANCE; SEMICONDUCTING INDIUM COMPOUNDS;

BANDGAP ENERGY; NEGATIVE DIFFERENTIAL RESISTANCE; SURFACE TUNNEL TRANSISTORS;

TRANSISTORS;

EID: 0031139733     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.568773     Document Type: Article

References (11)

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11. 0.47 As/AlAs resonant tunneling diodes with switching time of 1.5 ps," Electron. Lett., vol. 31, pp. 1695-1696, 1995.