Growth and characterization of nc-Ge prepared by microwave annealing

Vacuum

Volumn 85, Issue 10, 2011, Pages 927-931

  Srinivasa Rao, N ^a   Pathak, A P ^a   Devaraju, G ^a   Saikiran, V ^a  

^a UNIVERSITY OF HYDERABAD   (India)

Author keywords

Microwave annealing; Raman spectroscopy; RF sputtering; X ray diffraction

Indexed keywords

ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; COSPUTTERING; GE NANOCRYSTALS; MICROWAVE ANNEALING; NANOCRYSTAL SIZES; RAMAN SCATTERING SPECTRA; RAMAN SPECTROMETRIES; RF MAGNETRON SPUTTERING TECHNIQUE; RF SPUTTERING; SI SUBSTRATES; STRUCTURAL CHARACTERIZATION; VIBRATIONAL MODES; XRD MEASUREMENTS;

ANNEALING; DIFFRACTION; MAGNETRON SPUTTERING; MICROWAVE HEATING; MICROWAVES; NANOCRYSTALS; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SILICON COMPOUNDS; SILICON OXIDES; X RAY DIFFRACTION; X RAYS;

GERMANIUM;

EID: 79953061384     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2011.01.012     Document Type: Article

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