Formation of Ge nanocrystals embedded in a SiO2 matrix: Transmission electron microscopy, x-ray absorption, and optical studies

Physical Review B - Condensed Matter and Materials Physics

Volumn 67, Issue 19, 2003, Pages

  Kolobov, A V ^a,d   Wei, S Q ^b   Yan, W S ^b   Oyanagi, H ^a   Maeda, Y ^c   Tanaka, K ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^c Osaka Prefecture University   (Japan)

^d IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM; GLASS; SILICON DIOXIDE;

ARTICLE; CHEMICAL BOND; CRYSTAL; CRYSTAL STRUCTURE; CRYSTALLIZATION; MOLECULAR DYNAMICS; OPTICAL ROTATION; OSCILLATION; RAMAN SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY; X RAY ANALYSIS;

EID: 0038302264     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.67.195314     Document Type: Article

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