Influence of reductant and germanium concentration on the growth and stress development of germanium nanocrystals in silicon oxide matrix

Nanotechnology

Volumn 18, Issue 6, 2007, Pages

  Chew, H G ^a   Zheng, F ^b   Choi, W K ^a,b   Chim, W K ^a,b   Foo, Y L ^c   Fitzgerald, E A ^a,d  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d USA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CONCENTRATION (PROCESS); CRYSTAL GROWTH; ETCHING; GERMANIUM; HYDROFLUORIC ACID;

FORMING GAS; HYDROFLUORIC ACID SOLUTION; OXIDE MATRIX; REDUCTANTS;

NANOCRYSTALS;

GERMANIUM; OXIDE; REDUCING AGENT; SILICON;

ARTICLE; CRYSTAL STRUCTURE; DENSITY; ENVIRONMENTAL TEMPERATURE; OXIDATION; PRIORITY JOURNAL; QUALITY CONTROL; RAMAN SPECTROMETRY;

EID: 33947497528     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/18/6/065302     Document Type: Article

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