Effects influencing electron and hole retention times in Ge nanocrystal memory structures operating in the direct tunneling regime

Journal of Applied Physics

Volumn 108, Issue 5, 2010, Pages

  Peibst, R ^a,b   Erenburg, M ^a   Bugiel, E ^a   Hofmann, K R ^a  

^a LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^b INSTITUTE FOR SOLAR ENERGY RESEARCH HAMELIN ISFH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT TUNNELING; DISCHARGING PROCESS; ELECTRON CURRENTS; EXPERIMENTAL STUDIES; GE NANOCRYSTALS; NON-VOLATILE MEMORIES; NON-VOLATILE MEMORY APPLICATION; NONIDEAL; ORDER OF MAGNITUDE; RETENTION TIME; SI SUBSTRATES; THEORETICAL PREDICTION; TRAP DENSITY; TUNNEL OXIDE]; TUNNELING BARRIER;

ELECTRONS; FORECASTING; NANOCRYSTALS; SEMICONDUCTOR STORAGE; SILICON; SILICON COMPOUNDS;

GERMANIUM;

EID: 77956849422     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3467527     Document Type: Article

References (33)

1. C. M. Compagnoni, R. Gusmeroli, D. Ielmini, A. S. Spinelli, and A. L. Lacaita, J. Nanoscience Nanotechn. 7, 193 (2007).
2. S. Tiwari, F. Rana, H. Hanafi, A. Harstein, E. F. Crabbe, and K. Chan, Appl. Phys. Lett. APPLAB 0003-6951 68, 1377 (1996). 10.1063/1.116085 (Pubitemid 126688256)
3. M. Kanoun, A. Soufi, T. Baron, and F. Mazen, Appl. Phys. Lett. APPLAB 0003-6951 84, 5079 (2004). 10.1063/1.1751227
4. V. V. Afanas'ev, A. Stesmans, L. Souriau, R. Loo, and M. Meuris, Appl. Phys. Lett. APPLAB 0003-6951 94, 172106 (2009). 10.1063/1.3125434
5. A. Konchenko, Y. Nakayama, I. Matsuda, S. Hasegawa, Y. Nakamura, and M. Ichikawa, Phys. Rev. B PLRBAQ 0556-2805 73, 113311 (2006). 10.1103/PhysRevB.73. 113311 (Pubitemid 43463448)
6. J. S. de Sousa, V. N. Freire, and J. P. Leburton, Appl. Phys. Lett. APPLAB 0003-6951 90, 223504 (2007). 10.1063/1.2741598 (Pubitemid 46872668)
7. Y. -C. King, T. J. King, and C. Hu, Tech. Dig.-Int. Electron Devices Meet. TDIMD5 0163-1918 1998, 115.
8. Y. -C. King, T. J. King, and C. Hu, IEEE Trans. Electron Devices IETDAI 0018-9383 48, 696 (2001). 10.1109/16.915694 (Pubitemid 32372229)
9. One should note that for the samples investigated (Ref.), the tunnel oxide thickness and the control oxide thickness were only 1.5 nm and 3 nm, respectively.
10. It's difficult to prove or to exclude this conjecture, since the authors did not reported any details about the measurement procedure (Refs.). However, the retention characteristic (Fig. 7 in Ref.) and the endurance characteristic (Fig. 6 in Ref.) look surprisingly similar, which indicate that in both experiments, the NCs had been continously discharged and recharged.
11. M. Kanoun, C. Busseret, A. Poncet, A. Souifi, T. Baron, and E. Gautier, Solid-State Electron. SSELA5 0038-1101 50, 1310 (2006). 10.1016/j.sse.2006.07. 006 (Pubitemid 44251122)
12. V. Beyer, J. V. Borany, and M. Klimenkov, J. Appl. Phys. JAPIAU 0021-8979 101, 094507 (2007). 10.1063/1.2723864 (Pubitemid 46753108)
13. I. B. Akca, A. Dâna, A. Aydinli, and R. Turan, Appl. Phys. Lett. APPLAB 0003-6951 92, 052103 (2008). 10.1063/1.2835455 (Pubitemid 351230000)
14. K. H. Chiang, S. W. Lu, Y. H. Peng, C. H. Kuan, and C. S. Tsai, J. Appl. Phys. JAPIAU 0021-8979 104, 014506 (2008). 10.1063/1.2953194
15. L. B. Freeman and W. E. Dahlke, Solid-State Electron. SSELA5 0038-1101 13, 1483 (1970). 10.1016/0038-1101(70)90084-5
16. V. Beyer and J. V. Borany, Phys. Rev. B PLRBAQ 0556-2805 77, 014107 (2008). 10.1103/PhysRevB.77.014107
17. T. Dürkop, E. Bugiel, I. Costina, A. Ott, R. Peibst, and K. R. Hofmann, Mater. Sci. Eng., B MSBTEK 0921-5107 147, 213 (2008). 10.1016/j.mseb.2007.08.022 (Pubitemid 351179187)
18. R. Peibst, T. Dürkop, E. Bugiel, A. Fissel, I. Costina, and K. R. Hofmann, Phys. Rev. B PLRBAQ 0556-2805 79, 195316 (2009). 10.1103/PhysRevB.79. 195316
19. M. Kanoun, C. Busseret, A. Souifi, and T. Baron, Solid-State Electron. SSELA5 0038-1101 50, 769 (2006). 10.1016/j.sse.2006.02.003 (Pubitemid 44183593)
20. D. Bauza, J. Appl. Phys. JAPIAU 0021-8979 84, 6178 (1998). 10.1063/1.368934
21. F. P. Heiman and G. Warfield, IEEE Trans. Electron Devices IETDAI 0018-9383 12, 167 (1965). 10.1109/T-ED.1965.15475
22. G. Krause, Charakterisierung von Gate-Oxiden mittels Charge-Pumping und 1/f -Rauschen., Ph.D. thesis, Leibniz University Hannover, 2009.
23. E. H. Nicollian and A. Goetzberger, Bell Syst. Tech. J. BSTJAN 0005-8580 46, 1055 (1967).
24. J. R. Brews, Solid-State Electron. SSELA5 0038-1101 26, 711 (1983). 10.1016/0038-1101(83)90030-8
25. C. N. Berglund, IEEE Trans. Electron Devices IETDAI 0018-9383 13, 701 (1966). 10.1109/T-ED.1966.15827
26. The work function difference of ms =0.4 V yields ≈2.5 electrons stored per NC already in equilibrium. They were not removed completely during the (-1→1 V) sweep.
27. Sample nNC2, which has a thicker tunnel oxide than sample nNC1 but a thinner one than sample nNC3 (Table), exhibits similar charging/discharging characteristics as the other samples. The respective time scales are larger than those for sample nNC1, but smaller than those for sample nNC3. For clearness reasons, the respective curves are not shown in Figs.. The charging/discharging characteristics of sample pNC1 do not exhibit qualitative differences to those obtained for the n -channel samples.
28. B. H. Koh, E. W. H. Kan, W. K. Chim, W. K. Choi, D. A. Antoniadis, and E. A. Fitzgerald, J. Appl. Phys. JAPIAU 0021-8979 97, 124305 (2005). 10.1063/1.1931031 (Pubitemid 40925352)
29. E. W. H. Kan, W. K. Chim, C. H. Lee, W. K. Choi, and T. H. Ng, Appl. Phys. Lett. APPLAB 0003-6951 85, 2349 (2004). 10.1063/1.1793348
30. E. W. H. Kan, W. K. Choi, W. K. Chim, E. A. Fitzgerald, and D. A. Antoniadis, J. Appl. Phys. JAPIAU 0021-8979 95, 3148 (2004). 10.1063/1.1645639
31. Y. Liu, S. Tang, and S. K. Banerjee, Appl. Phys. Lett. APPLAB 0003-6951 88, 213504 (2006). 10.1063/1.2202749 (Pubitemid 43814867)
32. Y. M. Niquet, G. Allan, C. Delerue, and M. Lannoo, Appl. Phys. Lett. APPLAB 0003-6951 77, 1182 (2000). 10.1063/1.1289659
33. R. J. Walters, G. I. Bourianoff, and H. A. Atwater, Nature Mater. NMAACR 1476-1122 4, 143 (2005). 10.1038/nmat1307 (Pubitemid 40178713)