Correlation of electroluminescence with Ge nanocrystal sizes in Ge-SiO2 co-sputtered films

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 300, Issue 2-3, 2002, Pages 307-310

  Shen, J K ^a   Wu, X L ^a   Tan, C ^a   Yuan, R K ^a   Bao, X M ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

Electroluminescence; Magnetron sputtering; Photoluminescence

Indexed keywords

GOLD DEPOSITS; MAGNETRON SPUTTERING; METAL INSULATOR BOUNDARIES; MIS DEVICES; NANOCRYSTALS; PHOTOLUMINESCENCE; SILICA; SUBSTRATES;

AVERAGE SIZE; CO-SPUTTERED FILMS; GE NANOCRYSTALS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MIS STRUCTURE; N2 ATMOSPHERES; PEAK INTENSITY; SI SUBSTRATES;

ELECTROLUMINESCENCE;

GERMANIUM; SILICON DIOXIDE;

ARTICLE; ATMOSPHERE; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRONICS; FILM; LUMINESCENCE; METAL BINDING; MICROWAVE OVEN; NANOPARTICLE; OPTICS; PARTICLE SIZE; SAMPLING; SEMICONDUCTOR; STRUCTURE ANALYSIS; THEORY; X RAY DIFFRACTION;

EID: 0037194340     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(02)00617-5     Document Type: Article

References (17)