Stress development of germanium nanocrystals in silicon oxide matrix

Applied Physics Letters

Volumn 89, Issue 11, 2006, Pages

  Choi, W K ^a   Chew, H G ^e   Zheng, F ^e   Chim, W K ^e   Foo, Y L ^b   Fitzgerald, E A ^c,d  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^d Massachusetts Institute of Technology Cambridge   (United States)

^e NONE

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING AMBIENT; GERMANIUM NANOCRYSTALS; NANOCRYSTALS; SILICON OXIDE MATRICES;

ANNEALING; COMPRESSIVE STRESS; ETCHING; GERMANIUM; RAMAN SPECTROSCOPY; SILICA; STRESS ANALYSIS; THERMAL EFFECTS; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURED MATERIALS;

EID: 33748694528     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2354012     Document Type: Article

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