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Applied Physics Letters

Volumn 97, Issue 13, 2010, Pages

Surface states induced high P-type conductivity in nanostructured thin film composed of Ge nanocrystals in SiO2 matrix

(4) Zhang, B a Shrestha, S a Green, M A a Conibeer, G a

a UNIVERSITY OF NEW SOUTH WALES (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE HOPPING; CHARGE TRANSPORT MECHANISMS; ELECTRICAL CONDUCTIVITY; GE NANOCRYSTALS; HOLE ACCUMULATION; LOW THERMAL BUDGET; MATRIX; NANOSTRUCTURED THIN FILM; NEAREST NEIGHBORS; P-TYPE BEHAVIORS; P-TYPE CONDUCTIVITY; QUANTITATIVE ANALYSIS; SURFACE STATE; THERMALLY ACTIVATED; UNDOPED FILMS;

CONDUCTIVE FILMS; ELECTRIC CONDUCTIVITY; GERMANIUM; NANOCRYSTALS; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SILICON COMPOUNDS; SURFACE STRUCTURE; THIN FILMS;

SURFACE DEFECTS;

EID: 77957672253 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3496031 Document Type: Article

Times cited : (10)

References (25)

1
- 33646611558
- APPLAB 0003-6951,. 10.1063/1.105773
- Y. Maeda, N. Tsukamoto, Y. Yazawaa, Y. Kanemitsu, and Y. Masumoto, Appl. Phys. Lett. APPLAB 0003-6951 59, 3168 (1991). 10.1063/1.105773
- (1991) Appl. Phys. Lett. , vol.59 , pp. 3168
- Maeda, Y.¹ Tsukamoto, N.² Yazawaa, Y.³ Kanemitsu, Y.⁴ Masumoto, Y.⁵

2
- 79955984698
- Observation of memory effect in germanium nanocrystals embedded in an amorphous silicon oxide matrix of a metal-insulator-semiconductor structure
- DOI 10.1063/1.1459760
- W. K. Choi, W. K. Chim, C. L. Heng, L. W. Teo, V. Ho, and V. Ng, Appl. Phys. Lett. APPLAB 0003-6951 80, 2014 (2002). 10.1063/1.1459760 (Pubitemid 34326271)
- (2002) Applied Physics Letters , vol.80 , Issue.11 , pp. 2014
- Choi, W.K.¹ Chim, W.K.² Heng, C.L.³ Teo, L.W.⁴ Ho, V.⁵ Ng, V.⁶ Antoniadis, D.A.⁷ Fitzgerald, E.A.⁸

3
- 32044457589
- APPLAB 0003-6951,. 10.1063/1.109228
- D. C. Paine, C. Caragianis, T. T. Kim, Y. Shigesato, and T. Ishahara, Appl. Phys. Lett. APPLAB 0003-6951 62, 2842 (1993). 10.1063/1.109228
- (1993) Appl. Phys. Lett. , vol.62 , pp. 2842
- Paine, D.C.¹ Caragianis, C.² Kim, T.T.³ Shigesato, Y.⁴ Ishahara, T.⁵

4
- 0030083789
- Visible photoluminescence from Ge nanocrystal embedded into a SiO2 matrix fabricated by atmospheric pressure chemical vapor deposition
- DOI 10.1063/1.115964, PII S0003695196002094
- A. K. Dutta, Appl. Phys. Lett. APPLAB 0003-6951 68, 1189 (1996). 10.1063/1.115964 (Pubitemid 126684125)
- (1996) Applied Physics Letters , vol.68 , Issue.9 , pp. 1189-1191
- Dutta, A.K.¹

5
- 0037463333
- APPLAB 0003-6951,. 10.1063/1.1555709
- A. Kanjilal, J. L. Hansen, P. Gaiduk, A. N. Larsen, N. Cherkashin, A. Claverie, P. Normand, E. Kapelanakis, D. Skarlatos, and D. Tsoukalas, Appl. Phys. Lett. APPLAB 0003-6951 82, 1212 (2003). 10.1063/1.1555709
- (2003) Appl. Phys. Lett. , vol.82 , pp. 1212
- Kanjilal, A.¹ Hansen, J.L.² Gaiduk, P.³ Larsen, A.N.⁴ Cherkashin, N.⁵ Claverie, A.⁶ Normand, P.⁷ Kapelanakis, E.⁸ Skarlatos, D.⁹ Tsoukalas, D.¹⁰

6
- 77954188825
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.81.085321
- M. Buljan, I. Bogdanovic-Radovic, M. Karlusic, U. V. Desnica, N. Radic, B. Skukan, G. Drazic, M. Ivanda, O. Gamulin, Z. Matej, V. Vales, J. Grener, T. W. Cornelius, H. T. Metzger, and V. Holy, Phys. Rev. B PLRBAQ 0556-2805 81, 085321 (2010). 10.1103/PhysRevB.81.085321
- (2010) Phys. Rev. B , vol.81 , pp. 085321
- Buljan, M.¹ Bogdanovic-Radovic, I.² Karlusic, M.³ Desnica, U.V.⁴ Radic, N.⁵ Skukan, B.⁶ Drazic, G.⁷ Ivanda, M.⁸ Gamulin, O.⁹ Matej, Z.¹⁰ Vales, V.¹¹ Grener, J.¹² Cornelius, T.W.¹³ Metzger, H.T.¹⁴ Holy, V.¹⁵

7
- 77955654127
- THSFAP 0040-6090,. 10.1016/j.tsf.2010.04.024
- B. Zhang, S. Shrestha, P. Aliberti, M. A. Green, and G. Conibeer, Thin Solid Films THSFAP 0040-6090 518, 5483 (2010). 10.1016/j.tsf.2010.04.024
- (2010) Thin Solid Films , vol.518 , pp. 5483
- Zhang, B.¹ Shrestha, S.² Aliberti, P.³ Green, M.A.⁴ Conibeer, G.⁵

8
- 3142516291
- PRLTAO 0031-9007,. 10.1103/PhysRevLett.92.216802
- D. Yu, C. Wang, B. L. Wehrenberg, and P. Guyot-Sionnest, Phys. Rev. Lett. PRLTAO 0031-9007 92, 216802 (2004). 10.1103/PhysRevLett.92.216802
- (2004) Phys. Rev. Lett. , vol.92 , pp. 216802
- Yu, D.¹ Wang, C.² Wehrenberg, B.L.³ Guyot-Sionnest, P.⁴

9
- 0001509869
- Hopping conduction in SiO2 films containing C, Si, and Ge clusters
- DOI 10.1063/1.115994, PII S0003695196026265
- M. Fujii, Y. Inoue, S. Hayashi, and K. Yamamoto, Appl. Phys. Lett. APPLAB 0003-6951 68, 3749 (1996). 10.1063/1.115994 (Pubitemid 126683672)
- (1996) Applied Physics Letters , vol.68 , Issue.26 , pp. 3749-3751
- Fujii, M.¹ Inoue, Y.² Hayashi, S.³ Yamamoto, K.⁴

10
- 0001694953
- JAPIAU 0021-8979,. 10.1063/1.366858
- M. Fujii, O. Mamezaki, S. Hayashi, and K. Yamamoto, J. Appl. Phys. JAPIAU 0021-8979 83, 1507 (1998). 10.1063/1.366858
- (1998) J. Appl. Phys. , vol.83 , pp. 1507
- Fujii, M.¹ Mamezaki, O.² Hayashi, S.³ Yamamoto, K.⁴

11
- 41349097934
- Doped nanocrystals
- DOI 10.1126/science.1143802
- D. J. Norris, A. L. Efros, and S. C. Erwin, Science SCIEAS 0036-8075 319, 1776 (2008). 10.1126/science.1143802 (Pubitemid 351451581)
- (2008) Science , vol.319 , Issue.5871 , pp. 1776-1779
- Norris, D.J.¹ Efros, A.L.² Erwin, S.C.³

12
- 59849104225
- NNAABX 1748-3387,. 10.1038/nnano.2008.400
- M. T. Björk, H. Schmid, J. Knoch, H. Riel, and W. Riess, Nat. Nanotechnol. NNAABX 1748-3387 4, 103 (2009). 10.1038/nnano.2008.400
- (2009) Nat. Nanotechnol. , vol.4 , pp. 103
- Björk, M.T.¹ Schmid, H.² Knoch, J.³ Riel, H.⁴ Riess, W.⁵

13
- 77954336218
- APPLAB 0003-6951,. 10.1063/1.3457864
- B. Zhang, S. Shrestha, M. A. Green, and G. Conibeer, Appl. Phys. Lett. APPLAB 0003-6951 96, 261901 (2010). 10.1063/1.3457864
- (2010) Appl. Phys. Lett. , vol.96 , pp. 261901
- Zhang, B.¹ Shrestha, S.² Green, M.A.³ Conibeer, G.⁴

14
- 0020478369
- ELLEAK 0013-5194,. 10.1049/el:19820741
- G. K. Reeves and H. B. Harrison, Electron. Lett. ELLEAK 0013-5194 18, 1083 (1982). 10.1049/el:19820741
- (1982) Electron. Lett. , vol.18 , pp. 1083
- Reeves, G.K.¹ Harrison, H.B.²

15
- 33845962528
- Fermi-level pinning and charge neutrality level in germanium
- DOI 10.1063/1.2410241
- A. Dimoulas, P. Tsipas, and A. Sotiropoulos, Appl. Phys. Lett. APPLAB 0003-6951 89, 252110 (2006). 10.1063/1.2410241 (Pubitemid 46035146)
- (2006) Applied Physics Letters , vol.89 , Issue.25 , pp. 252110
- Dimoulas, A.¹ Tsipas, P.² Sotiropoulos, A.³ Evangelou, E.K.⁴

16
- 0343493147
- JAPIAU 0021-8979,. 10.1063/1.1722317
- R. H. Kingston, J. Appl. Phys. JAPIAU 0021-8979 27, 101 (1956). 10.1063/1.1722317
- (1956) J. Appl. Phys. , vol.27 , pp. 101
- Kingston, R.H.¹

17
- 58149528199
- APPLAB 0003-6951,. 10.1063/1.3068497
- P. Tsipas and A. Dimoulas, Appl. Phys. Lett. APPLAB 0003-6951 94, 012114 (2009). 10.1063/1.3068497
- (2009) Appl. Phys. Lett. , vol.94 , pp. 012114
- Tsipas, P.¹ Dimoulas, A.²

18
- 17144410348
- Influence of surface states on electron transport through intrinsic Ge nanowires
- DOI 10.1021/jp044491b
- T. Hanrath and B. A. Korgel, J. Phys. Chem. B JPCBFK 1089-5647 109, 5518 (2005). 10.1021/jp044491b (Pubitemid 40519451)
- (2005) Journal of Physical Chemistry B , vol.109 , Issue.12 , pp. 5518-5524
- Hanrath, T.¹ Korgel, B.A.²

19
- 70349956650
- NALEFD 1530-6984,. 10.1021/nl901548u
- S. X. Zhang, E. R. Hemesath, D. E. Perea, E. Wijaya, J. L. Lensch-Falk, and L. J. Lauhon, Nano Lett. NALEFD 1530-6984 9, 3268 (2009). 10.1021/nl901548u
- (2009) Nano Lett. , vol.9 , pp. 3268
- Zhang, S.X.¹ Hemesath, E.R.² Perea, D.E.³ Wijaya, E.⁴ Lensch-Falk, J.L.⁵ Lauhon, L.J.⁶

20
- 74849094696
- NALEFD 1530-6984,. 10.1021/nl9029972
- J. Park, B. Ryu, C. Moon, and K. J. Chang, Nano Lett. NALEFD 1530-6984 10, 116 (2010). 10.1021/nl9029972
- (2010) Nano Lett. , vol.10 , pp. 116
- Park, J.¹ Ryu, B.² Moon, C.³ Chang, K.J.⁴

21
- 21644485442
- Stable, freestanding Ge nanocrystals
- DOI 10.1063/1.1942629, 124316
- I. D. Sharp, Q. Xu, C. Y. Liao, D. O. Yi, J. W. Beeman, Z. Liliental-Weber, K. M. Yu, D. N. Zakharov, J. W. Ager III, D. C. Chrzan, and E. E. Haller, J. Appl. Phys. JAPIAU 0021-8979 97, 124316 (2005). 10.1063/1.1942629 (Pubitemid 40925361)
- (2005) Journal of Applied Physics , vol.97 , Issue.12 , pp. 1-4
- Sharp, I.D.¹ Xu, Q.² Liao, C.Y.³ Yi, D.O.⁴ Beeman, J.W.⁵ Liliental-Weber, Z.⁶ Yu, K.M.⁷ Zakharov, D.N.⁸ Ager III, J.W.⁹ Chrzan, D.C.¹⁰ Haller, E.E.¹¹

22
- 41449100686
- PLRBAQ 0556-2805,. 10.1103/PhysRevB.77.115325
- F. Djurabekova and K. Nordlund, Phys. Rev. B PLRBAQ 0556-2805 77, 115325 (2008). 10.1103/PhysRevB.77.115325
- (2008) Phys. Rev. B , vol.77 , pp. 115325
- Djurabekova, F.¹ Nordlund, K.²

23
- 9644276649
- JACSAT 0002-7863,. 10.1021/ja0465808
- T. Hanrath and B. A. Korgel, J. Am. Chem. Soc. JACSAT 0002-7863 126, 15466 (2004). 10.1021/ja0465808
- (2004) J. Am. Chem. Soc. , vol.126 , pp. 15466
- Hanrath, T.¹ Korgel, B.A.²

24
- 33845230979
- MSSPFQ 1369-8001,. 10.1016/j.mss2006.09.002
- A. Molle, M. N. K. Bhuiyan, G. Tallarida, and M. Fanciulli, Mater. Sci. Semicond. Process. MSSPFQ 1369-8001 9, 673 (2006). 10.1016/j.mssp.2006.09.002
- (2006) Mater. Sci. Semicond. Process. , vol.9 , pp. 673
- Molle, A.¹ Bhuiyan, M.N.K.² Tallarida, G.³ Fanciulli, M.⁴

25
- 0021446952
- x)
- DOI 10.1016/0038-1098(84)90292-8
- M. Nakamura, Y. Mochizuki, K. Usami, Y. Itoh, and T. Nozaki, Solid State Commun. SSCOA4 0038-1098 50, 1079 (1984). 10.1016/0038-1098(84)90292-8 (Pubitemid 14625757)
- (1984) Solid State Communications , vol.50 , Issue.12 , pp. 1079-1081
- Nakamura, M.¹ Mochizuki, Y.² Usami, K.³ Itoh, Y.⁴ Nozaki, T.⁵

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