Ge nanocrystals embedded in SiO2 in MOS based radiation sensors

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 268, Issue 22, 2010, Pages 3417-3420

  Akta, Aliekber ^a   Yilmaz, Ercan ^a   Mogaddam, Nader A P ^b   Aygün, Gülnur ^c   Cantas, Ayten ^c   Turan, Rait ^b  

^a ABANT IZZET BAYSAL UNIVERSITY   (Turkey)

^b MIDDLE EAST TECHNICAL UNIVERSITY   (Turkey)

^c IZMIR INSTITUTE OF TECHNOLOGY   (Turkey)

Author keywords

Gamma radiation; Germanium; Nanocrystals; r.f. Sputtering; Raman spectroscopy

Indexed keywords

AFTER HIGH TEMPERATURE; CAPACITANCE VOLTAGE MEASUREMENTS; GAMMA RADIATION; GAMMA RADIATION EFFECTS; GE NANOCRYSTALS; INERT ATMOSPHERES; INTERFACE TRAP CHARGE; MOS STRUCTURE; OXIDE TRAPS; R.F.-SPUTTERING; RADIATION DOSE; RADIATION SENSORS; RAMAN MEASUREMENTS; RAMAN SIGNAL; RAMAN SPECTRA;

GAMMA RAYS; GERMANIUM; NANOCRYSTALS; RADIATION SHIELDING; RAMAN SCATTERING; RAMAN SPECTROSCOPY; SENSORS; SILICON COMPOUNDS;

RADIATION EFFECTS;

EID: 78049267779     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2010.09.007     Document Type: Article

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