Effect of germanium concentration and oxide diffusion barrier on the formation and distribution of germanium nanocrystals in silicon oxide matrix

Nanotechnology

Volumn 17, Issue 8, 2006, Pages 1964-1968

  Chew, H G ^a   Choi, W K ^a,b   Foo, Y L ^c   Zheng, F ^b   Chim, W K ^a,b   Voon, Z J ^b   Seow, K C ^b   Fitzgerald, E A ^a,d   Lai, D M Y ^c  

^a SINGAPORE MIT ALLIANCE   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^d Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; GERMANIUM; REDUCTION; SILICA; SYNTHESIS (CHEMICAL);

DIFFUSION BARRIER; NANOCRYSTALS; OXIDE CONCENTRATION;

NANOSTRUCTURED MATERIALS;

EID: 33645275505     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/17/8/028     Document Type: Article

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