Splitting of X-ray diffraction peak in (Ge:SiO2)/SiO2 multilayers

Solid State Communications

Volumn 131, Issue 1, 2004, Pages 21-25

  Li, J ^a   Wu, X L ^a   Hu, D S ^a   Yang, Y M ^a   Qiu, T ^a   Shen, J C ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

A. (Ge:SiO2) SiO2 multilayers; A. X ray diffraction; B. Structural change

Indexed keywords

ANNEALING; CRYSTALLIZATION; DIAMONDS; NANOSTRUCTURED MATERIALS; OPTOELECTRONIC DEVICES; PHOTOLUMINESCENCE; RAMAN SCATTERING; SILICA; STRESS ANALYSIS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DIAMOND STRUCTURE; GE NANOCRYSTALS; STRUCTURAL CHANGE;

MULTILAYERS;

EID: 2442532589     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.ssc.2004.04.026     Document Type: Article

References (15)

1. Lyer S.S., Xie Y.H. Science. 260:1993;40.
2. Kanemitsu Y., Uto H., Masumoto Y., Maeda Y. Appl. Phys. Lett. 18:1992;2187.
3. Yue L.P., He Y.Z. J. Appl. Phys. 81:1997;2910.
4. Shcheglov K.V., Yang C.M., Vahara K.J., Atwater H.A. Appl. Phys. Lett. 66:1995;745.
5. Zhang J.Y., Wu X.L., Bao X.M. Appl. Phys. Lett. 71:1997;2505.
6. Wu X.L., Gao T., Bao X.M., Yan F., Jiang S.S., Feng D. J. Appl. Phys. 82:1997;2704.
7. Cheng W.J., Jia H.J., Fang Y.J., He D.Y. Int. J. Mod. Phys. B. 16:2002;4238.
8. Wu X.L., Yan F., Siu G.G., Bao X.M., Jiang S.S., Feng D. Phys. Lett. A221:1996;261.
9. Sato S., Nozaki S., Morisaki H., Iwase M. Appl. Phys. Lett. 66:1995;3176.
10. Sato S., Nozaki S., Morisaki H. Appl. Phys. Lett. 72:1998;2460.
11. Wu X.L., Tong S., Liu X.N., Bao X.M., Jiang S.S., Feng D. Appl. Phys. Lett. 70:1997;838.
12. Campbell I.H., Fauchet P.M. Solid State Commun. 58:1986;739.
13. Li J., Wu X.L., Yang Y.M., Yang X., Bao X.M. Phys. Lett. A. 314:2003;299.
14. Phillips M.A., Clemens B.M., Nix W.D. Acta Mater. 51:2003;3171.
15. Rath S., Sato S., Ono H., Nozaki S., Morisaki H. Mater. Chem. Phys. 54:1998;244.