Formation of germanium nanocrystals by rapid thermal oxidizing SiGeO layer for nonvolatile memory application

Surface and Coatings Technology

Volumn 202, Issue 4-7, 2007, Pages 1333-1337

  Chen, Wei Ren ^a   Chang, Ting Chang ^b   Liu, Po Tsun ^a   Tu, Chun Hao ^a   Yeh, Jui Lung ^a   Hsieh, Yen Ting ^a   Wang, Ren You ^c   Chang, Chun Yen ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

^c NATIONAL SUN YAT SEN UNIVERSITY   (Taiwan)

Author keywords

Germanium nanocrystal; Germanium oxide; Nonvolatile memory; Rapid temperature oxidation

Indexed keywords

ELECTRON AFFINITY; NANOCRYSTALS; NONVOLATILE STORAGE; NUCLEATION; OXIDATION; RAPID THERMAL PROCESSING;

CAPACITANCE-VOLTAGE HYSTERESIS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

ELECTRON AFFINITY; NANOCRYSTALS; NONVOLATILE STORAGE; NUCLEATION; OXIDATION; RAPID THERMAL PROCESSING; SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 36048951430     PISSN: 02578972     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.surfcoat.2007.07.112     Document Type: Article

References (20)

1. Tiwar S., Rana F., Chan K., Hanafi H., Chan W., and Buchanan D. IEDM Tech. Dig. (1995) 521
2. Pavan P., Bez R., Olivo P., and Zanoni E. Proc. IEEE. 85 (1997) 1248
3. Tu C.H., Chang T.C., Liu P.T., Liu H.C., Tsai C.C., Chang L.T., Tseng T.Y., Sze S.M., and Chang C.Y. Appl. Phys. Lett. 89 (2006) 052112
4. Jung J.H., Jin J.Y., Lee I., Kim T.W., Roh H.G., and Kim Y.H. Appl. Phys. Lett. 88 (2006) 112107
5. Normand P., Tsoukalas D., and Beltsios K. Appl. Phys. Lett. 80 (2002) 15
6. Chang T.C., Yan S.T., Liu P.T., Chen C.W., Lin S.H., and Sze S.M. Electrochem. Solid-State Lett. 7 (2004) G17
7. Cady W.A., and Varadarajan M. J. Electrochem. Soc. 143 (1996) 6
8. Choi W.K., Ho Y.W., Ng S.P., and Ng V. J. Appl. Phys. 89 (2001) 2168
9. Chang T.C., Yan S.T., Liu P.T., Chen C.W., Lin S.H., and Sze S.M. Appl. Phys. Lett. 84 (2004) 2581
10. Barin I. Thermochemical Data of Pure Substances. 3rd ed. vols. I and II (1995), VCH, Weinheim
11. Afanas'ev V.V., and Stesemans A. Appl. Phys. Lett. 84 (2004) 2319
12. Hou T.H., Ganguly U., and Kan E.C. IEEE Electron Device Lett. 28 (2007) 2
13. Hsieh S.I., Chen H.T., Chen Y.C., Chen C.L., and King Y.C. IEEE Electron Device Lett. 27 (2006) 4
14. DiMaria D.J. J. Appl. Phys. 84 4 (2006) 2100
15. Cho C.H., Kim B.H., Kim T.W., Park S.J., Park N.M., and Sung G.Y. Appl. Phys.Lett. 86 (2005) 143107
16. Tu C.H., Chang T.C., Liu P.T., Liu H.C., Sze S.M., and Chang C.Y. Appl. Phys. Lett. 89 (2006) 162105
17. Ng C.Y., Chen T.P., Yang M., Yang J.B., Ding L., Li C.M., Du A., and Trigg A. IEEE Electron Device Lett. 53 (2006) 4
18. Ioannou-Sougleridis V., and Nassiopoulou A.G. J. Appl. Phys. 94 (2003) 4084
19. Lee P.F., Liu W.L., Song Z.T., and Dai J.Y. Appl. Phys. Lett. 56 (1999) 150
20. Takagahara T., and Takeda K. Phys. Rev., B 46 (1992) 15578