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Volumn 517, Issue 13, 2009, Pages 3639-3644
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Structural, electrical, and optical properties of copper indium diselenide thin film prepared by thermal evaporation method
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Author keywords
Atomic force microscopy; Copper indium diselenide thin film; Electrical characterization; Optical characterization; Thermal evaporation; X ray diffraction
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Indexed keywords
ABSORPTION COEFFICIENTS;
AFM;
ATOMIC-FORCE MICROSCOPIES;
BASE PRESSURES;
CHALCOPYRITE STRUCTURES;
COPPER INDIUM DISELENIDE THIN FILM;
DIRECT REACTIONS;
ELECTRICAL CHARACTERIZATION;
ENERGY DISPERSIVE ANALYSIS OF X-RAYS;
GRAIN SIZES;
HIGH PURITIES;
NEAR STOICHIOMETRIC;
OPTICAL AND ELECTRICAL CHARACTERIZATIONS;
OPTICAL AND ELECTRICAL PROPERTIES;
OPTICAL CHARACTERIZATION;
OPTICAL TRANSMISSION MEASUREMENTS;
PREFERRED ORIENTATIONS;
PULVERIZED MATERIALS;
QUARTZ AMPOULES;
RESISTIVITY VALUES;
SODA LIME GLASS SUBSTRATES;
STOICHIOMETRIC COMPOUNDS;
SUBSTRATE TEMPERATURES;
THERMAL EVAPORATION METHODS;
THERMAL EVAPORATION TECHNIQUES;
THERMAL-ANNEALING;
VACUUM CHAMBERS;
XRD;
ATOMIC FORCE MICROSCOPY;
ATOMS;
CHARACTERIZATION;
COPPER;
COPPER COMPOUNDS;
DIFFRACTION;
ELECTRIC PROPERTIES;
ELECTRODEPOSITION;
HALL EFFECT;
INDIUM;
MAGNETIC FIELD EFFECTS;
OPTICAL MICROSCOPY;
OPTICAL PROPERTIES;
OXIDE MINERALS;
QUARTZ;
SELENIUM;
SELENIUM COMPOUNDS;
SEMICONDUCTING SELENIUM COMPOUNDS;
STOICHIOMETRY;
SUBSTRATES;
THERMAL EFFECTS;
THIN FILM DEVICES;
THIN FILMS;
TRANSMISSION ELECTRON MICROSCOPY;
VAPORS;
X RAY DIFFRACTION;
X RAY DIFFRACTION ANALYSIS;
THERMAL EVAPORATION;
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EID: 64449085034
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/j.tsf.2008.11.133 Document Type: Article |
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Times cited : (46)
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References (16)
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